© 2019 Littelfuse, Inc.

Specifications are subject to change without notice.

Revised: 03/04/19

GEN2 SiC Schottky Diode

SiC Schottky Diode

LSIC2SD065E20CCA, 650 V, 20 A,TO-247-3L

LSIC2SD065E20CCA 650 V, 20 A SiC Schottky Barrier Diode

Features

• AEC-Q101 qualified

• Positive temperature

coefficient for safe

operation and ease of

paralleling

operating junction

temperature

• Excellent surge capability

• Extremely fast,

temperature-independent

switching behavior

• Dramatically reduced

switching losses

compared to Si bipolar

diodes

Maximum Ratings

Characteristics

Symbol

Conditions

Value

Unit

Repetitive Peak Reverse Voltage

V

RRM

-

650

V

DC Blocking Voltage

V

R

T

650

V

Continuous Forward Current

(Per Leg/Component)

I

F

T

27 / 54

A

T

10 / 20

Non-Repetitive Forward Surge Current

(Per Leg)

I

FSM

T

50

A

Power Dissipation

(Per Leg/Component)

P

Tot

T

100 / 200

W

T

43 / 86

Operating Junction Temperature

T

J

-

-55 to 175

°C

Storage Temperature

T

STG

-

-55 to 150

°C

Soldering Temperature

T

sold

-

260

°C

Description

This series of silicon carbide (SiC) Schottky diodes has

negligible reverse recovery current, high surge capability, and

diode series is ideal for applications where improvements in

efficiency, reliability, and thermal management are desired.

Circuit Diagram TO-247-3L

Applications

• Boost diodes in PFC or

DC/DC stages

• Switch-mode power

supplies

• Uninterruptible power

supplies

• Solar inverters

• Industrial motor drives

• EV charging stations

• Littelfuse “RoHS” logo =

RoHS conform

• Littelfuse “HF” logo =

Halogen Free

• Littelfuse “Pb-free” logo =

Pb-free lead plating

Environmental

RoHS

Pb

PIN 1

PIN 2

PIN 3

CASE

12

3