STP26N60DM6 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	STP26N60DM6

Description	N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET in a TO‑220 package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1

2

3

TO-220

TAB

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

STP26N60DM6

600 V

195 mΩ

18 A

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STP26N60DM6

Product summary

Order code

STP26N60DM6

Marking

26N60DM6

Package

TO-220

Packing

Tube

N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET

in a TO

‑220 package

STP26N60DM6

Datasheet

DS12853 - Rev 3 - September 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

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STP26N60DM6 Datasheet(PDF) 1 Page - STMicroelectronics

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