IRLR024, IRLU024, SiHLR024, SiHLU024

www.vishay.com

Vishay Siliconix

S21-0818-Rev. F, 02-Aug-2021

1

Document Number: 91322

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Surface-mount (IRLR024, SiHLR024)

• Straight lead (IRLU024, SiHLU024)

• Available in tape and reel

• Logic-level gate drive

• Fast switching

• Material categorization: for definitions of compliance

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRLU, SiHLU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

PRODUCT SUMMARY

60

0.10

18

4.5

12

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

G

D S

S

D

G

D

Available

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free and halogen-free

-

SiHLR024TRL-GE3

SiHLR024TR-GE3

SiHLU024-GE3

IRLR024PbF-BE3

-

IRLR024TRPbF-BE3

Lead (Pb)-free

IRLR024PbF

IRLR024TRLPbF

IRLU024PbF

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

60

V

Gate-source voltage

± 10

Continuous drain current

14

A

9.2

56

Linear derating factor

0.33

W/°C

0.020

Drain-source voltage

53

mJ

Maximum power dissipation

42

W

2.5

dV/dt

4.5

V/ns

Operating junction and storage temperature range

-55 to +150

°C

For 10 s

260