NTMTS002N08MC datasheet(2/7 Pages) ONSEMI

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NTMTS002N08MC

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

ID = 250 mA, ref to 25°C

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 80 V

TJ = 25°C

TJ = 125°C

250

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 540 mA

2.0

2.7

4.0

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

ID = 540 mA, ref to 25°C

−7.9

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 90 A

1.3

2.0

Drain−to−Source On Resistance

RDS(on)

VGS = 6 V

ID = 48 A

1.8

5.1

Forward Transconductance

gFS

VDS = 5 V, ID = 90 A

214

Gate Resistance

TA = 25°C

0.8

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 40 V

6350

8900

Output Capacitance

COSS

2100

3000

Reverse Transfer Capacitance

CRSS

130

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 40 V; ID = 90 A

125

Threshold Gate Charge

QG(TH)

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

Output Charge

QOSS

117

Sync Charge

Qsync

Plateau Voltage

Vplateau

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 40 V,

ID = 90 A, RG = 6 W

Rise Time

Turn−Off Delay Time

td(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 2 A

0.7

1.2

VGS = 0 V, IS = 90 A

0.8

1.3

Reverse Recovery Time

tRR

IF = 45 A, di/dt = 300 A/ms

Reverse Recovery Charge

QRR

114

Reverse Recovery Time

tRR

IF = 45 A, di/dt = 1000 A/ms

Reverse Recovery Charge

QRR

177

283

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures.

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