NTMTS0D7N06CL datasheet(4/7 Pages) ONSEMI

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NTMTS0D7N06CL

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

100

125

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

1E−08

1E−05

1.2

0.8

0.6

0.4

0.2

0.1

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Drain Current vs. Time in

Avalanche

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TIME IN AVALANCHE (s)

1000

0.1

100

1000

100

VGS = 0 V

TJ = 25°C

f = 1 MHz

CISS

COSS

CRSS

VDS = 30 V

TJ = 25°C

ID = 50 A

QGS

QGD

VGS = 10 V

VDS = 30 V

ID = 50 A

td(off)

td(on)

TJ = 25°C

TJ = −55°C

TJ(initial) = 100°C

TJ(initial) = 25°C

0.00001

0.01

RDS(on) Limit

Thermal Limit

Package Limit

10 ms

0.5 ms

1 ms

10 ms

TC = 25°C

Single Pulse

VGS ≤ 10 V

100K

1000

0.01

TJ = 175°C

VGS = 0 V

0.0001

100

10K

0.001

TJ = 150°C

TJ = 125°C

100

175

0.1

1E−07

1E−06

1.0

150

200

100

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