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NTMTS4D3N15MC Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTMTS4D3N15MC
Description  MOSFET ??Power, Single N-Channel, DFNW8 150 V, 4.45 m, 174 A
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMTS4D3N15MC Datasheet(HTML) 2 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2019
November, 2020 − Rev. 0
1
Publication Order Number:
NTMTS4D3N15MC/D
MOSFET – Power, Single
N-Channel, DFNW8
150 V, 4.45 mW, 174 A
NTMTS4D3N15MC
Features
• Small Footprint (8x8 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain−to−Source Voltage
150
V
VGS
Gate−to−Source Voltage
±20
V
ID
Continuous Drain
Current RqJC (Note 2)
Steady
State
TC = 25°C
174
A
PD
Power Dissipation
RqJC (Note 2)
293
W
ID
Continuous Drain
Current RqJA
(Notes 1, 2)
Steady
State
TA = 25°C
22
A
PD
Power Dissipation
RqJA (Notes 1, 2)
5
W
IDM
Pulsed Drain Current
TA = 25°C, tp = 10 ms
900
A
TJ, Tstg
Operating Junction and Storage Temperature
Range
−55 to
+175
°C
IS
Source Current (Body Diode)
244
A
EAS
Single Pulse Drain−to−Source Avalanche
Energy (IL = 48.5 A, L = 0.3 mH)
354
mJ
TL
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted
MARKING DIAGRAM
www.onsemi.com
V(BR)DSS
RDS(ON) MAX
ID MAX
150 V
4.45 mW @ 10 V
174 A
G (1)
S (2, 3, 4)
N−CHANNEL MOSFET
D (5, 6, 7, 8)
DFNW8 8.3x8.4, 2P
CASE 507AP
4D3N15MC
= Specific Device Code
A
= Assembly Location
WL
= Wafer Lot Code
Y
= Year Code
WW
= Work Week Code
4D3N15MC
AWLYWW
Device
Package
Shipping†
ORDERING INFORMATION
NTMTS4D3N15MC
DFNW8
PQFN88
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5 mW @ 8 V
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