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TMS28F004ASB90CDCDL Datasheet(PDF) 57 Page - Texas Instruments

Part # TMS28F004ASB90CDCDL
Description  524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
PDF  80 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F004ASB90CDCDL Datasheet(HTML) 57 Page - Texas Instruments

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TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/262144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
57
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
switching characteristics for TMS28F400AFy over recommended ranges of supply voltage
(automotive temperature range)
read operations
ALT
’28F400AFy 70
’28F400AFy 70
’28F400AFy 80
’28F400AFy 80
’28F004AFy 90
’28F400AFy 90
PARAMETER
ALT.
SYMBOL
5-V VCC
RANGE
5-V VCC
RANGE
5-V VCC
RANGE
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
ta(A)
Access time from A0 – A17 (see Note 15)
tAVQV
70
80
90
ns
ta(E)
Access time from E
tELQV
70
80
90
ns
ta(G)
Access time from G
tGLQV
35
40
45
ns
tc(R)
Cycle time, read
tAVAV
70
80
90
ns
td(E)
Delay time, E low to low-impedance output
tELQX
0
0
0
ns
td(G)
Delay time, G low to low-impedance output
tGLQX
0
0
0
ns
tdis(E)
Disable time, E to high-impedance output
tEHQZ
25
30
35
ns
tdis(G)
Disable time, G to high-impedance output
tGHQZ
25
30
35
ns
th(D)
Hold time, DQ valid from A0 – A17, E, or G,
whichever occurs first (see Note 15)
tAXQX
0
0
0
ns
tsu(EB)
Setup time, BYTE from E low
tELFL
tELFH
5
5
5
ns
td(RP)
Output delay time from RP high
tPHQV
300
300
300
ns
tdis(BL)
Disable time, BYTE low to DQ8 – DQ15 in
high-impedance state
tFLQZ
30
30
35
ns
ta(BH)
Access time from BYTE going high
tFHQV
70
80
90
ns
NOTE 15: A–1 – A17 for byte-wide



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