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SIR770DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIR770DP Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 18 page  www.vishay.com 2 Document Number: 66818 S10-1923-Rev. A, 23-Aug-10 Vishay Siliconix SiR770DP Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 80 °C/W. c. Guaranteed by design, not subject to production testing. d. Pulse test; pulse width 300 µs, duty cycle 2 %. THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Channel-2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambienta, b t 10 s RthJA 28 35 28 35 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 5.5 7.0 5.5 7.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.c Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA Ch-1 30 V VGS = 0 V, ID = 1 mA Ch-2 30 VDS Temperature Coefficient V DS/TJ ID = 250 µA Ch-1 34 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 µA Ch-1 - 5.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1.2 2.8 V VDS = VGS, ID = 250 µA Ch-2 1.2 2.8 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Ch-1 100 nA VDS = 0 V, VGS = ± 20 V Ch-2 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 0.001 mA VDS = 30 V, VGS = 0 V Ch-2 0.015 0.1 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-1 0.025 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-2 1.2 15 On-State Drain Currentd ID(on) VDS =5 V, VGS = 10 V Ch-1 10 A VDS =5 V, VGS = 10 V Ch-2 10 Drain-Source On-State Resistanced RDS(on) VGS = 10 V, ID = 8 A Ch-1 0.0175 0.021 VGS = 10 V, ID = 8 A Ch-2 0.0175 0.021 VGS = 4.5 V, ID = 6 A Ch-1 0.0205 0.025 VGS = 4.5 V, ID = 6 A Ch-2 0.0205 0.025 Forward Transconductanced gfs VDS = 15 V, ID = 8 A Ch-1 31 S VDS = 15 V, ID = 8 A Ch-2 31 Dynamicc Input Capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 900 pF Ch-2 900 Output Capacitance Coss Ch-1 150 Ch-2 180 Reverse Transfer Capacitance Crss Ch-1 60 Ch-2 60 |
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