FAM65CR51AXZ2 datasheet(6/14 Pages) ONSEMI

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FAM65CR51AXZ1, FAM65CR51AXZ2

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PARAMETER DEFINITIONS

Reference to Table 3: Parameter of MOSFET Electrical Specifications

BVDSS

Q1, Q2 MOSFET Drain−to−Source Breakdown Voltage

The maximum drain−to−source voltage the MOSFET can endure without the avalanche breakdown of the body− drain

P−N junction in off state.

The measurement conditions are to be found in Table 3.

The typ. Temperature behavior is described in Figure 13

VGS(th)

Q1, Q2 MOSFET Gate to Source Threshold Voltage

The gate−to−source voltage measurement is triggered by a threshold ID current given in conditions at Table 4.

The typ. Temperature behavior can be found in Figure 10

RDS(ON)

Q1, Q2 MOSFET On Resistance

RDS(on) is the total resistance between the source and the drain during the on state.

The measurement conditions are to be found in Table 3.

The typ behavior can be found in Figure 11 and Figure 12 as well as Figure 17

gFS

Q1, Q2 MOSFET Forward Transconductance

Transconductance is the gain in the MOSFET, expressed in the Equation below.

It describes the change in drain current by the change in the gate−source bias voltage: gfs = [DIDS / DVGS ]VDS

IGSS

Q1, Q2 MOSFET Gate−to−Source Leakage Current

The current flowing from Gate to Source at the maximum allowed VGS

The measurement conditions are described in the Table 3.

IDSS

Q1, Q2 MOSFET Drain−to−Source Leakage Current

Drain – Source current is measured in off state while providing the maximum allowed drain−to-source voltage and the

gate is shorted to the source.

IDSS has a positive temperature coefficient.

FAM65CR51AXZ2 Datasheet(PDF) 6 Page - ON Semiconductor