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NFAM5065L4BTL Datasheet(PDF) 5 Page - ON Semiconductor

Part # NFAM5065L4BTL
Description  Intelligent Power Module (IPM), 650 V, 50 A
PDF  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NFAM5065L4BTL Datasheet(HTML) 5 Page - ON Semiconductor

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C) (Note 2)
Symbol
Rating
Conditions
Value
Unit
VPN
Supply Voltage
P−NU, NV, NW
450
V
VPN(surge)
Supply Voltage (Surge)
P−NU, NV, NW (Note 3)
550
V
VPN(PROT)
Self Protection Supply Voltage Limit
(Short−Circuit Protection Capability)
VDD = VBS = 13.5 V
~16.5 V, TJ = 150°C,
VCES < 650 V, Non−Repetitive, < 2
ms
400
V
Vces
Collector−emitter voltage
650
V
VRRM
Maximum Repetitive
Revers Voltage
650
V
±Ic
Each IGBT Collector Current
±30
A
Iop
Output current (peak)
PWM control
±50
A
±Icp
Each IGBT Collector
Current (Peak)
Under 1 ms Pulse Width
±100
A
VDD
Control Supply Voltage
VDD(UH,VH,WH), VDD(L)−VSS
−0.3 to 20
V
VBS
High−Side
Control Bias voltage
VB(U)−VS(U), VB(V)−VS(V),
VB(W)−VS(W)
−0.3 to 20
V
VIN
Input Signal Voltage
HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),
LIN(W)–VSS
−0.3 to VDD
V
VFO
Fault Output Supply Voltage
VFO–VSS
−0.3 to VDD
V
IFO
Fault Output Current
Sink Current at VFO pin
2
mA
VCIN
Current Sensing
Input Voltage
CIN–VSS
−0.3 to VDD
V
Pc
Corrector Dissipation
Per One Chip
125
W
TJ
Operating Junction Temperature
−40 to +150
°C
Tstg
Storage temperature
−40 to +125
°C
Tc
Module Case Operation Temperature
−40 to +125
°C
VISO
Isolation voltage
60 Hz, Sinusoidal, AC 1 minute,
Connection
Pins to Heat Sink Plate
2500
Vrms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
3. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.
THERMAL CHARACTERISTICS
Symbol
Rating
Conditions
Min
Typ
Max
Unit
Rth(j-c)Q
Junction-to-Case Thermal
Resistance
Inverter IGBT Part (per 1/6 module)
−
−
1.0
°C/W
Rth(j-c)F
Inverter FWD Part (per 1/6 module)
−
−
1.7
°C/W
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.



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