Rev. A 10/02

1

2

3

4

5

6

NOTES:

Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

Devices shall be 100% tested to subgroups 1,2,3 and 4. Subgroup 5 and 6 testing available upon request.

Subgroup 1,4,7

2,5

3,6

Industrial grade and "E" suffix devices shall be 100% tested at 25°C only.

The internal on resistance is for the die only. This should be used for thermal calculations only.

ELECTRICAL SPECIFICATIONS

22

2

OUTPUT CHARACTERISTICS

VDS (ON) Voltage (Each Mosfet)

Instantaneous Forward Voltage

(Each Intrinsic Diode)

RDS (ON) (Each Mosfet)

Leakage Current, Each Mosfet

PWM Frequency

Quiescent Current

+5V Output

OUTPUT DUTY CYCLE

Analog Input Current

SWITCHING CHARACTERISTICS

Rise Time

Fall Time

Dead Time

LOGIC CONTROL INPUTS

DIS Input

HEN Input

Group A

1

2

3

1

2

3

-

1

2

3

4,5,6

1,2,3

1,2,3

1,2,3

4,5,6

7

7

-

4

4

4

1,2,3

1,2,3

1,2,3

1,2,3

1,2,3

1,2,3

Min.

-

-

-

-

-

-

-

-

-

-

40

-

4.85

4.8

40

-

-

-

-

-

-

-

2.7

-

-

2.7

-

Max.

1.2

-

-

2.0

-

-

0.13

100

-

-

50

50

5.15

5.2

60

-

-

5

TBD

TBD

TBD

0.8

-

150

0.8

-

300

Typ.

0.5

-

-

1.1

-

-

0.07

25

-

-

45

25

5.0

5.0

50

-

-

-

TBD

TBD

TBD

-

-

-

-

-

-

Units

V

V

V

V

V

V

Ω

µA

µA

µA

KHz

mA

V

V

%

P/F

P/F

µAmp

µSec

µSec

µSec

V

V

µAmp

V

V

µAmp

MSK4203H/E

MSK4203

Parameter

Max.

1.0

2.0

1.0

1.8

1.9

1.8

0.13

50

500

50

50

45

5.1

5.15

60

-

-

5

TBD

TBD

TBD

0.8

-

150

0.8

-

300

V+=75V

Input Current (High or Low)

Input Current (High or Low)

Min.

-

-

-

-

-

-

-

-

-

-

40

-

4.9

4.85

40

-

-

-

-

-

-

-

2.7

-

-

2.7

-

Typ.

0.5

1.0

0.2

1.1

1.2

1.0

0.07

25

100

25

45

25

5.0

5.0

50

-

-

-

TBD

TBD

TBD

-

-

-

-

-

-

2 6

3 5

5

Subgroup

4

2

2

2