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MSK4401D Datasheet(PDF) 2 Page - M.S. Kennedy Corporation |
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MSK4401D Datasheet(HTML) 2 Page - M.S. Kennedy Corporation |
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2 / 5 page ![]() All Inputs Off f=20KHz, 50% Duty Cycle VIN=0V VIN=5V ID=250µA, All Inputs Off VDS=70V ID=29A V+=29V, RL=1 Ω ID=29A SWR Resistor= ∞ SWR Resistor= ∞ SWR Resistor= ∞ SWR Resistor= ∞ SWR=Open SWR=12K ISD=29A ISD=10A, di/dt=100A/µS mAmp mAmp Volts Volts Volts Volts µAmp µAmp V µAmp V nSec nSec µSec µSec µSec µSec µSec µSec Volts nSec 75V 16V -0.3V to VBIAS +0.3V 29A 41A High Voltage Supply Bias Supply Logic Input Voltages Continuous Output Current Peak Output Current ABSOLUTE MAXIMUM RATINGS V+ VBIAS VIND IOUT IPK 3.0°C/W -55°C to +125°C +300°C -40°C to +85°C +150°C θJC TST TLD TC TJ Parameter ELECTRICAL SPECIFICATIONS Units Max. 8 25 7.6 8.1 0.8 - 140 +10 - 250 1.25 - - 2 8 8 2 7.0 1.2 - - MSK 4401 Typ. 6 12.5 6.6 7.1 - - 100 - - - - 120 81 0.5 5 5 0.5 5.0 0.6 2.5 120 Min. - - 5.6 6.1 - 2.7 55 -10 70 - - - - - - - - 3.0 0.3 - - Test Conditions CONTROL SECTION VBIAS Quiescent Current VBIAS Operating Current Undervoltage Threshold (Falling) Undervoltage Threshold (Rising) Low Level Input Voltage High Level Input Voltage Low Level Input Current High Level Input Current OUTPUT BRIDGE Drain-Source Breakdown Voltage Drain-Source Leakage Current Drain-Source On Voltage Drain-Source On Resistance (Each FET, for thermal calculations only) SWITCHING CHARACTERISTICS Rise Time Fall Time Enable Turn-On Prop Delay (Lower) Enable Turn-Off Prop Delay (Lower) Enable Turn-On Prop Delay (Upper) Enable Turn-Off Prop Delay (Upper) Dead Time Dead Time SOURCE-DRAIN DIODE CHARACTERISTICS Forward Voltage Reverse Recovery Time Thermal Resistance (Output Switches @125°C) Storage Temperature Range Lead Temperature Range (10 Seconds) Case Operating Temperature Junction Temperature Rev. E 11/04 2 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only. VBIAS=+12V, V+=28V, RSENSE A,B=Ground, DIS=0V, EN=0V, SWR=open unless otherwise specified. Measured using a 300µSec pulse with a 2% duty cycle. On Resistance is specified for the internal MOSFET for thermal calculations. It does not include the package pin resistance. 1 2 3 4 NOTES: 1 1 1 1 1 1 1 3 3 1 1 1 1 1 1 2 Tc=+25°C unless otherwise specified ID=29A - - 0.013 Ω 4 |
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