MSK 4422

Min.

Typ.

Max.

OUTPUT CHARACTERISTICS

VDS(ON) (Each Transistor)

Instantaneous Forward Voltage (Intrinsic Diode)

Reverse Recovery Time

1

BIAS SUPPLY CHARACTERISTICS

INPUT SIGNAL CHARACTERISTICS

Positive Trigger Threshold Voltage

Negative Trigger Threshold Voltage

I. Trip Threshold Voltage

SWITCHING CHARACTERISTICS

Upper Drive:

Turn-On Propagation Delay

Turn-Off Propagation Delay

Turn-On

Turn-Off

Lower Drive:

Turn-On Propagation Delay

Turn-Off Propagation Delay

Turn-On

Turn-Off

Dead Time

1

Minimum Pulse Width

1

2

ABSOLUTE MAXIMUM RATINGS

V+

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

MSK 4422

Junction Temperature

Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

Measured using a 300µS pulse with a 2% duty cycle.

ON resistance is specified for the internal MOSFET for thermal calculations only. It does not include the package pin resistance.

ELECTRICAL SPECIFICATIONS

Parameters

V+ = 200V

V+ = 160V

V+ = 200V

Vcc = 15V

Vcc = 15V

Vcc = 15V

-

-

-

-

-

-

-

-

-

2.2

-

400

-

-

-

-

-

-

-

-

-

300

1.3

1.2

-

3

-

-

3

-

-

-

-

500

0.98

2.4

330

440

0.9

2.0

140

215

2

-

1.7

1.5

330

250

-

-

10

-

-

-

0.8

600

-

-

-

-

-

-

-

-

-

-

UNITS

V

V

nS

µA

µA

µA

mA

mA

mA

V

V

mV

µS

µS

nS

nS

µS

µS

nS

nS

µS

nS

3

Test Conditions

NOTES:

(non-switching)

-55° to +125°C

300°C

-40°C to +85°C

+150°C

TsT

TLD

TC

TJ

High Voltage Supply

Logic Supply

Continuous Output Current

Peak Output Current

Thermal Resistance

(Output Switches)

(Junction to Case @ 125°C)

200V

18V

20A

44A

2.3°C/W

Leakage Current

Quiescent Bias Current

1

2

3

1

2

3

4

Rev. B 4/05