NVC080N120SC1 datasheet(7/8 Pages) ONSEMI

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NVC080N120SC1

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TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted

Figure 8. Gate Charge Characteristics

Figure 9. Capacitance vs. Drain−to−Source

Voltage

Figure 10. Unclamped Inductive Switching

Capability

Figure 11. Maximum Continuous Drain Current

vs. Case Temperature

Figure 12. Forward Bias Safe Operating Area

Figure 13. Single Pulse Maximum Power

Dissipation

102030405060

ID = 20 A

VDD = 600 V

VDD = 800 V

Qg, GATE CHARGE (nC)

VDD = 400 V

0.1

100

800

100

1000

10000

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

0.001

0.01

0.1

Starting TJ = 150 oC

Starting TJ = 25oC

tAV, TIME IN AVALANCHE (ms)

RqJC = 0.84 oC/W

VGS = 20 V

C, CASE TEMPERATURE (

oC)

0.1

0.01

100

1000

10 ms

1 ms

100 ms

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

RqJC = 0.84

oC/W

TC = 25

0.00001

0.0001

0.001

0.01

0.1

100

1000

10000

50000

SINGLE PULSE

RqJC = 0.84

oC/W

TC = 25

t, PULSE WIDTH (sec)

0.1

100

1000 5000

100 ms

100

125

150

175

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