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BUTW92 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUTW92 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BUTW92 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 5mA; VEB =0 500 V VEBO Emitter-Base Breakdown Voltage IE= 1mA 7 VCE(sat) Collector-Emitter Saturation Voltage IC= 60A; IB= 15A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 60A; IB= 15A 1.9 V ICES Collector Cutoff Current VCE=RatedVCES ;VBE= 0 VCE=RatedVCES ;VBE= 0;TC=100℃ 0.05 1.0 mA IEBO Emitter Cutoff Current VEB= 5.0V; IC= 0 0.05 mA hFE-1 DC Current Gain IC= 60A; VCE= 3V 9 hFE-2 DC Current Gain IC= 5A; VCE= 3V 65 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. |
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