BLC9G22LS-160VT

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© Ampleon Netherlands B.V. 2017. All rights reserved.

Product data sheet

Rev. 2 — 24 May 2017

13 of 16

BLC9G22LS-160VT

Power LDMOS transistor

9. Handling information

[1]

CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails

after exposure to an ESD pulse of 750 V.

[2]

HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails

after exposure to an ESD pulse of 4000 V.

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10.

ESD sensitivity

ESD model

Class

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002

C2A [1]

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001

2 [2]

Table 11.

Abbreviations

Acronym

Description

3GPP

3rd Generation Partnership Project

CCDF

Complementary Cumulative Distribution Function

CW

Continuous Wave

DPCH

Dedicated Physical CHannel

ESD

ElectroStatic Discharge

ESR

Equivalent Series Resistance

IS-95

Interim Standard 95

LDMOS

Laterally Diffused Metal Oxide Semiconductor

MTF

Median Time to Failure

PAR

Peak-to-Average Ratio

SMD

Surface Mounted Device

VBW

Video BandWidth

VSWR

Voltage Standing Wave Ratio

W-CDMA

Wideband Code Division Multiple Access

Table 12.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BLC9G22LS-160VT v.2

20170524

Product data sheet

BLC9G22LS-160VT v.1

Modifications:

• Table 3 on page 2: change version to SOT1271-2

• Figure 21 on page 12: change package outline drawing to SOT1271-2

BLC9G22LS-160VT v.1

20170104

Product data sheet

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