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NVMFS005N10MCL Datasheet(PDF) 2 Page - ON Semiconductor |
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NVMFS005N10MCL Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() NVMFS005N10MCL www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C 52 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 100 V TJ = 25°C 1 mA TJ = 125°C 100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 192 mA 1 3 V Threshold Temperature Coefficient VGS(TH)/TJ ID = 250 mA, ref to 25°C −5.6 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 34 A 4.2 5.1 mW VGS = 4.5 V, ID = 27 A 5.6 7.1 Forward Transconductance gFS VDS = 10 V, ID = 50 A 155 S Gate−Resistance RG TA = 25°C 0.85 W CHARGES & CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 50 V 4100 pF Output Capacitance COSS 1350 Reverse Transfer Capacitance CRSS 22 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 50 V, ID = 34 A 26 nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 50 V, ID = 34 A 55 nC Gate−to−Source Charge QGS 11 Gate−to−Drain Charge QGD 5 Plateau Voltage VGP 3 V Threshold Gate Charge QG(TH) 6 nC SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(ON) VGS = 10 V, VDS = 50 V, ID = 34 A, RG = 6 W 17 ns Rise Time tr 6.7 Turn−Off Delay Time td(OFF) 57 Fall Time tf 12.3 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 34 A TJ = 25°C 0.85 1.3 V TJ = 125°C 0.73 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 17 A 56 ns Reverse Recovery Charge QRR 54 nC Charge Time ta 25 ns Discharge Time tb 31 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures |
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