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NVMFS2D3P04M8L Datasheet(PDF) 2 Page - ON Semiconductor |
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NVMFS2D3P04M8L Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 9 page ![]() © Semiconductor Components Industries, LLC, 2017 March, 2021 − Rev. 6 1 Publication Order Number: NVMFS2D3P04M8L/D MOSFET - Power, Single P-Channel -40 V, 2.2 mW, -222 A NVMFS2D3P04M8L Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • NVMFWS2D3P04M8L − Wettable Flanks Product • NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −40 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- rent RqJC (Notes 1, 2, 3) Steady State TC = 25°C ID −222 A TC = 100°C −157 Power Dissipation RqJC (Notes 1, 2) TC = 25°C PD 205 W TC = 100°C 103 Continuous Drain Cur- rent RqJA (Notes 1, 2, 3) Steady State TA = 25°C ID −31 A TA = 100°C −22 Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD 3.8 W TA = 100°C 1.9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM −900 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS −171 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 40 A) EAS 1516 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) (Note 2) RqJC 0.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. −40 V 2.2 mW @ −10 V RDS(on) −222 A ID V(BR)DSS 3.3 mW @ −4.5 V www.onsemi.com P−Channel D (5, 6) S (1, 2, 3) G (4) DFN5/DFNW5 CASES 506EZ/507AZ MARKING DIAGRAM A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability XXXXXX AYWZZ S S S G D D D D See detailed ordering, marking and shipping information on page 5 of this data sheet. ORDERING INFORMATION 1 |
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