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NVMFS2D3P04M8L Datasheet(PDF) 2 Page - ON Semiconductor

Part # NVMFS2D3P04M8L
Description  MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A
PDF  9 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVMFS2D3P04M8L Datasheet(HTML) 2 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2017
March, 2021 − Rev. 6
1
Publication Order Number:
NVMFS2D3P04M8L/D
MOSFET - Power, Single
P-Channel
-40 V, 2.2 mW, -222 A
NVMFS2D3P04M8L
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• NVMFWS2D3P04M8L − Wettable Flanks Product
• NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−40
V
Gate−to−Source Voltage
VGS
"20
V
Continuous Drain Cur-
rent RqJC (Notes 1, 2, 3)
Steady
State
TC = 25°C
ID
−222
A
TC = 100°C
−157
Power Dissipation RqJC
(Notes 1, 2)
TC = 25°C
PD
205
W
TC = 100°C
103
Continuous Drain Cur-
rent RqJA (Notes 1, 2, 3)
Steady
State
TA = 25°C
ID
−31
A
TA = 100°C
−22
Power Dissipation RqJA
(Notes 1, 2)
TA = 25°C
PD
3.8
W
TA = 100°C
1.9
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
−900
A
Operating Junction and Storage Temperature
Range
TJ, Tstg
−55 to
+175
°C
Source Current (Body Diode)
IS
−171
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 40 A)
EAS
1516
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Note 2)
RqJC
0.7
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
−40 V
2.2 mW @ −10 V
RDS(on)
−222 A
ID
V(BR)DSS
3.3 mW @ −4.5 V
www.onsemi.com
P−Channel
D (5, 6)
S (1, 2, 3)
G (4)
DFN5/DFNW5
CASES 506EZ/507AZ
MARKING
DIAGRAM
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
XXXXXX
AYWZZ
S
S
S
G
D
D
D
D
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
1



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