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BLC2425M9LS250 Datasheet(PDF) 3 Page - Ampleon Netherlands B.V. |
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BLC2425M9LS250 Datasheet(HTML) 3 Page - Ampleon Netherlands B.V. |
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3 / 11 page ![]() BLC2425M9LS250 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved. Product data sheet Rev. 3 — 20 December 2016 3 of 11 BLC2425M9LS250 Power LDMOS transistor 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation The BLC2425M9LS250 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases with a time rate of 15 ms/degree under the following conditions: VDS =32V; IDq =20mA; PL = 250 W (CW); f = 2450 MHz; Tcase =25 C. 7.2 Impedance information [1] ZS and ZL defined in Figure 1. Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0 V; ID = 2.7 mA 65.00 - - V VGS(th) gate-source threshold voltage VDS =32 V; ID = 20 mA 1.15 1.70 2.25 V IDSS drain leakage current VGS =0 V; VDS = 32 V - - 4.20 A IDSX drain cut-off current VGS =VGS(th) +3.75 V; VDS =10 V - 53.50 - A IGSS gate leakage current VGS =11 V; VDS = 0 V - - 40.00 nA gfs forward transconductance VDS =10 V; ID = 13.5 A - 20.16 - S RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75 V; ID =9.45A - 52.50 - m Table 7. RF characteristics Test signal: CW at 2450 MHz; RF performance at VDS = 32 V; IDq = 20 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 250 W 16.3 18.5 - dB RLin input return loss PL = 250 W - 15 10 dB D drain efficiency PL = 250 W 55 58.5 - % Table 8. Typical impedance Measured load-pull data. Typical values unless otherwise specified. IDq =20 mA; VDS =32 V. f ZS [1] ZL [1] (MHz) ( ) ( ) 2400 0.9 5.0j 1.9 0.4j 2450 1.0 5.4j 1.7 1.4j 2500 2.0 6.1j 1.7 1.1j |
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