Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

BLC2425M9LS250 Datasheet(PDF) 3 Page - Ampleon Netherlands B.V.

Part # BLC2425M9LS250
Description  Power LDMOS transistor
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  AMPLEON [Ampleon Netherlands B.V.]
Direct Link  https://www.ampleon.com
Logo AMPLEON - Ampleon Netherlands B.V.

BLC2425M9LS250 Datasheet(HTML) 3 Page - Ampleon Netherlands B.V.

  BLC2425M9LS250 Datasheet HTML 1Page - Ampleon Netherlands B.V. BLC2425M9LS250 Datasheet HTML 2Page - Ampleon Netherlands B.V. BLC2425M9LS250 Datasheet HTML 3Page - Ampleon Netherlands B.V. BLC2425M9LS250 Datasheet HTML 4Page - Ampleon Netherlands B.V. BLC2425M9LS250 Datasheet HTML 5Page - Ampleon Netherlands B.V. BLC2425M9LS250 Datasheet HTML 6Page - Ampleon Netherlands B.V. BLC2425M9LS250 Datasheet HTML 7Page - Ampleon Netherlands B.V. BLC2425M9LS250 Datasheet HTML 8Page - Ampleon Netherlands B.V. BLC2425M9LS250 Datasheet HTML 9Page - Ampleon Netherlands B.V. Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
BLC2425M9LS250
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 20 December 2016
3 of 11
BLC2425M9LS250
Power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operation
The BLC2425M9LS250 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases with a time rate of 15 ms/degree under the following
conditions: VDS =32V; IDq =20mA; PL = 250 W (CW); f = 2450 MHz; Tcase =25 C.
7.2 Impedance information
[1]
ZS and ZL defined in Figure 1.
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown voltage VGS =0 V; ID = 2.7 mA
65.00 -
-
V
VGS(th)
gate-source threshold voltage
VDS =32 V; ID = 20 mA
1.15
1.70
2.25
V
IDSS
drain leakage current
VGS =0 V; VDS = 32 V
-
-
4.20
A
IDSX
drain cut-off current
VGS =VGS(th) +3.75 V;
VDS =10 V
-
53.50 -
A
IGSS
gate leakage current
VGS =11 V; VDS = 0 V
-
-
40.00 nA
gfs
forward transconductance
VDS =10 V; ID = 13.5 A
-
20.16 -
S
RDS(on)
drain-source on-state resistance VGS =VGS(th) + 3.75 V;
ID =9.45A
-
52.50 -
m
Table 7.
RF characteristics
Test signal: CW at 2450 MHz; RF performance at VDS = 32 V; IDq = 20 mA; Tcase = 25 C; unless
otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 250 W
16.3
18.5
-
dB
RLin
input return loss
PL = 250 W
-
15
10
dB
D
drain efficiency
PL = 250 W
55
58.5
-
%
Table 8.
Typical impedance
Measured load-pull data. Typical values unless otherwise specified. IDq =20 mA; VDS =32 V.
f
ZS [1]
ZL [1]
(MHz)
(
)
(
)
2400
0.9
 5.0j
1.9
 0.4j
2450
1.0
 5.4j
1.7
 1.4j
2500
2.0
 6.1j
1.7
 1.1j



Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com