1. Product profile

1.1 General description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific

and medical applications in the HF to 500 MHz band.

1.2 Features and benefits



Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an



Average output power = 300 W



Power gain = 27.2 dB



Efficiency = 70 %



Easy power control



Integrated ESD protection



Excellent ruggedness



High efficiency



Excellent thermal stability



Designed for broadband operation (HF and VHF band)



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



Industrial, scientific and medical applications



Broadcast transmitter applications

BLF573; BLF573S

HF / VHF power LDMOS transistor

Rev. 4 — 1 September 2015

Product data sheet

Table 1.

Production test information

Mode of operation

f

(MHz)

(V)

(W)

(dB)

(%)

CW

225

50

300

27.2

70

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.