BLF2425M8LS140 datasheet(3/11 Pages) AMPLEON

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BLF2425M8L140_2425M8LS140#2

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Product data sheet

Rev. 2 — 1 September 2015

3 of 11

BLF2425M8L(S)140

Power LDMOS transistor

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF2425M8L140 and BLF2425M8LS140 are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS =28V; IDq = 1300 mA; PL =140 W(CW); f =2450MHz.

7.2 Impedance information

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

Max Unit

V(BR)DSS drain-source breakdown voltage

VGS = 0 V; ID =2.16 mA

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 216 mA

1.5

1.9

2.3

IDSS

drain leakage current

VGS = 0 V; VDS =28 V

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

-41

IGSS

gate leakage current

VGS =11V; VDS = 0 V

500 nA

gfs

forward transconductance

VDS = 10 V; ID =10.8 A

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =7.56 A

-69



Table 7.

RF characteristics

Test signal: CW; f = 2450 MHz; VDS = 28 V; IDq = 1300 mA; Tcase = 25 C unless otherwise specified

in a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 140 W

17.5

RLin

input return loss

PL = 140 W

16

8dB

D

drain efficiency

PL = 140 W

Table 8.

Typical impedance

Measured load-pull data. Typical values unless otherwise specified. IDq =1300mA; VDS =28V.

ZS and ZL defined in Figure 1.

(MHz)

(

)

(

)

2400

3.7

 5.4j

1.3

 1.5j

2450

6.9

 5.0j

1.5

 1.6j

2500

8.7

 2.0j

1.5

 1.6j

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