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NVMJS0D8N04CL Datasheet(PDF) 4 Page - ON Semiconductor |
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NVMJS0D8N04CL Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 7 page ![]() NVMJS0D8N04CL www.onsemi.com 4 TYPICAL CHARACTERISTICS Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge QG, TOTAL GATE CHARGE (nC) 80 40 0 0 2 4 6 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) 60 0 1 1000 1.0 0.8 0.6 0.4 0.2 0 0.001 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (s) 10 1 0.1 0.1 10 100 1000 100 td(off) td(on) tf tr TJ = 25°C TJ = −55°C 0.0001 RDS(on) Limit Thermal Limit Package Limit 10 ms 1 ms 10 ms 160 VGS = 0 V 0.01 100 1 100 1 1 10 0.1 100 10 10 30 40 100 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 100 VGS = 0 V TJ = 25°C f = 1 MHz CISS COSS CRSS 100K 40 5 0 1K 10K 10 20 50 TJ = 175°C 120 0.01 TJ(initial) = 100°C 100 ms TC = 25°C Single Pulse VGS ≤ 10 V TJ = 25°C ID = 50 A VDS = 32 V 1000 1000 VGS = 10 V VDS = 32 V ID = 50 A 0.001 TJ(initial) = 25°C QGS QGD 15 20 25 30 35 60 20 140 1 3 5 9 7 1000 10 |
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