VS-ST110SPbF Series

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Vishay Semiconductors

Revision: 27-Sep-17

6

Document Number: 94393

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions

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0.1

1

10

100

0.001

0.01

0.1

1

10

100

VGD

IGD

(b)

(a)

(1)

(2)

(3)

Instantaneous Gate Current (A)

a) Recommended load line for

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

Frequency Limited by PG(AV)

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

Device: ST110S Series

Rectangular gate pulse

(4)

-

Thyristor

2

-Essential part marking

3

-

0 = converter grade

4

11

10

-

S = compression bonding stud

8

-

V = glass-metal seal (only up to 1200 V)

5

-

6

-

P = stud base 20UNF threads

7

-

0 = eyelet terminals (gate and auxiliary cathode leads)

1 = fast-on terminals (gate and auxiliary cathode leads)

2 = flag terminals (for cathode and gate terminals)

9

-

Critical dV/dt:

None = ceramic housing (over 1200 V)

None = 500 V/μs (standard value)

L = 1000 V/μs (special selection)

Device code

5

1

3

2

4

6

7

8

9

10

11

ST

VS-

11

0

S

16

P

0

V

L

PbF

1

-Vishay Semiconductors product

-

None = standard production

-

PbF = lead (Pb)-free