NVMJS1D2N04CLTWG datasheet(3/7 Pages) ONSEMI

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NVMJS1D2N04CL

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TYPICAL CHARACTERISTICS

3.2 V

3.0 V

2.8 V

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

100

120

3.0

2.0

1.0

100

150

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

9.5

8.5

7.5

6.5

5.5

4.5

3.5

130

170

0.5

1.5

2.0

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150

125

100

−25

−50

0.7

0.9

1.1

1.3

1.5

1.7

1.9

100

10K

3.4 V

VGS = 10 V to 3.6 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

VGS = 10 V

ID = 50 A

175

TJ = 125°C

TJ = 85°C

160

180

200

250

100K

TJ = 150°C

4.0

150

190

1.0

200

VDS = 10 V

140

1.5

2.5

3.5

2.5

110

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