NVMJS1D4N06CL datasheet(3/7 Pages) ONSEMI

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NVMJS1D4N06CL

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TYPICAL CHARACTERISTICS

3.2 V

2.6 V

2.8 V

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

3.0

1.0

0.0

100

120

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

9.0

8.0

7.0

6.0

5.0

4.0

3.0

140

180

100

0.8

1.2

2.0

3.0

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150

125

100

−25

−50

0.7

0.9

1.1

1.3

1.5

1.7

2.1

10K

2.4 V

VGS = 10 V to 3.6 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

ID = 50 A

VGS = 10 V

ID = 50 A

175

TJ = 125°C

TJ = 25°C

160

180

2.0

100

TJ = 150°C

1.6

200

VDS = 10 V

140

2.0

220

260

280

320

340

360

240

300

5.0

4.0

3.5

1.5

0.5

2.5

4.5

3.0

1.0

0.0

100

120

160

180

2.0

200

140

220

260

280

320

340

360

240

300

5.0

4.0

3.5

1.5

0.5

2.5

4.5

260

300

220

2.4

2.8

1.0

1.8

1.4

2.2

2.6

VGS = 10 V

TJ = 25°C

VGS = 4.5 V

1.9

1000

100K

TJ = 85°C

TJ = 175°C

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