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NVMJS1D7N06C Datasheet(PDF) 4 Page - ON Semiconductor

Part # NVMJS1D7N06C
Description  MOSFET - Power, Single N-Channel 60 V, 1.68 m, 224 A
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVMJS1D7N06C Datasheet(HTML) 4 Page - ON Semiconductor

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NVMJS1D7N06C
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
10
1
0.1
1
100
1000
64
48
32
24
16
8
0
0
2
4
6
8
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
50
10
1
1
100
1000
1.0
0.8
1.2
0.6
0.4
0.2
0
0.001
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (s)
1000
10
1
0.1
0.1
10
100
1000
0.0001
1
10
100
VGS = 0 V
TJ = 25°C
f = 750 KHz
CISS
COSS
CRSS
VDS = 48 V
TJ = 25°C
ID = 50 A
QGS
QGD
td(off)
td(on)
tf
tr
TJ = 125°C TJ = 25°C
TJ = −55°C
300
TJ(initial) = 150°C
TJ(initial) = 25°C
0.001
0.01
RDS(on) Limit
Thermal Limit
Package Limit
10 ms
0.5 ms
1 ms
10 ms
TC = 25°C
Single Pulse
VGS ≤ 10 V
10
10,000
1
100
40
56
10
100
10
0.01
0.1
VGS = 0 V
60



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