1AM datasheet(1/1 Pages) AVICTEK

Part #	1AM

Description	SOT-23 Plastic-Encapsulate Transistors

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Manufacturer	AVICTEK [Avic Technology]

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SOT-23 Plastic-Encapsulate Transistors

MMBT3904LT1

TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

0.2

W (Tamb=25

℃)

Collector current

ICM:

0.2

A

Collector-base voltage

V(BR)CBO:

60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

µA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 1 mA, IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

6

V

Collector cut-off current

ICBO

VCB= 60V, IE=0

0.1

µA

Collector cut-off current

ICEO

VCE= 40V, IB=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

µA

HFE(1)

VCE=10V, IC= 1mA

100

300

DC current gain

HFE(2)

VCE= 1V, IC= 50mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=50mA, IB= 5mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC= 50mA, IB= 5mA

0.95

V

Transition frequency

fT

VCE= 20V, IC= 10mA

f=100MHz

250

MHz

Delay Time

td

35

nS

Rise Time

tr

VCC=3.0Vdc, VBE=-0.5Vdc

IC=10mAdc, IB1=1.0mAdc

35

nS

Storage Time

ts

200

nS

Fall Time

tf

VCC=3.0Vdc, IC=10mAdc

IB1=IB2=1.0mAdc

50

nS

DEVICE MARKING

MMBT3904LT1=1AM

Unit: mm

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

@vic

Copyright @vic Electronics Corp.

Website http://www.avictek.com

MMBT3904LT1

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