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2542 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 2542
Description  Dual N-Channel MOSFET
PDF  5 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

2542 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

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2
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
19
V
Zero gate voltage drain current
IDSS
VDS =19V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
uA
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
0.5
V
Drain-source on-resistance (note 3)
RDS(on)
VGS =4.5V, ID =8.0A
mΩ
VGS =3.5V, ID =7.0A
9.0
mΩ
Forward tranconductance (note 3)
gFS
VDS =5V, ID =4A
10
S
Diode forward voltage (note 3)
VSD
IS=1.50A, VGS = 0V
1.0
V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance
Ciss
VDS =10V,VGS =0V,f =1MHz
879
pF
Output Capacitance
Coss
245
pF
Reverse Transfer Capacitance
Crss
232
pF
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time
td(on)
6.2
ns
Turn-on rise time
tr
15
ns
Turn-off delay time
td(off)
42
ns
Turn-off fall time
tf
13
ns
Total Gate Charge
Qg
VDS =10V,VGS =4.5V,ID=6A
16
nC
Gate-Source Charge
Qgs
3.2
nC
Gate-Drain Charge
Qgd
5.0
nC
Notes :
1.Repetitive rating：Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board，t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
1.0
6.8
6.5
8.0
VGS=4.5V, VDS=10V,
RGEN=3Ω
5.0
5.5
0.6
VGS =2.5V, ID =6.0A
10
mΩ
8.0
6.5
ID=6A
±7
uA
1
www.sztuofeng.com
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
DFN-2x3-6L Plastic-Encapsulate MOSFETS
2542
,
V1.0
2020
Mar



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