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4840 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 4840
Description  N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

4840 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  4840 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 4840 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 4840 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 4840 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 4840 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co 4840 Datasheet HTML 6Page - Shenzhen Tuofeng Semiconductor Technology Co  
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Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
00
IGSS
±100
nA
VGS(th)
1.0
1.6
V
ID(ON)
45
A
12
m
gFS
42
S
VSD
0.8
1.2
V
IS
3
A
Ciss
1780
pF
Coss
209
pF
Crss
160
pF
Rg
9.5
Qg (10V)
30
Qg (4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
29.8
tf
trr
29
ns
Qrr
26
nC
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=0V, VDS=20V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
VDD= 20V, VGEN= 10V, RL= 2Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Total Gate Charge (10V)
VDD= 20V, VGEN = 10V, ID= 10A
m
VGS= 4.5V, ID= 15A
IS= 10A,VGS=0V
VDS= 15V, ID = 15A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
A
Gate Threshold Voltage
VDS=VGS ID= 250µA
VDS= 40V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF= 10A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID= 250µA, VGS=0V
VGS= 10V , VDS= 5V
VGS= 10V, ID= 15A
Reverse Transfer Capacitance
IF= 10A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
n
10
5
9
2.0
nC
16.2
nC
4.2
nC
9.5
nC
ns
17.2
ns
6.4
ns
16.8
ns
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOP-8 Plastic-Encapsulate MOSFETS
4840



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