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4840 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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4840 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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2 / 6 page ![]() Page v1.0 2 www.sztuofeng.com Symbol Min Typ Max Units BVDSS 40 V 1 00 IGSS ±100 nA VGS(th) 1.0 1.6 V ID(ON) 45 A 12 m Ω gFS 42 S VSD 0.8 1.2 V IS 3 A Ciss 1780 pF Coss 209 pF Crss 160 pF Rg 9.5 Ω Qg (10V) 30 Qg (4.5V) Qgs Qgd tD(on) tr tD(off) 29.8 tf trr 29 ns Qrr 26 nC DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=20V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime VDD= 20V, VGEN= 10V, RL= 2Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime SWITCHING PARAMETERS Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Total Gate Charge (10V) VDD= 20V, VGEN = 10V, ID= 10A m Ω VGS= 4.5V, ID= 15A IS= 10A,VGS=0V VDS= 15V, ID = 15A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS A Gate Threshold Voltage VDS=VGS ID= 250µA VDS= 40V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF= 10A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID= 250µA, VGS=0V VGS= 10V , VDS= 5V VGS= 10V, ID= 15A Reverse Transfer Capacitance IF= 10A, dI/dt=100A/µs A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. n 10 5 9 2.0 nC 16.2 nC 4.2 nC 9.5 nC ns 17.2 ns 6.4 ns 16.8 ns SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4840 |
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