8820 datasheet(2/5 Pages) TUOFENG

2 / 5 page

www.sztuofeng.com

Feb,2018 V1.0

MOSFET ELECTRICAL CHARACTERISTICS

Ta =25 ℃ unless otherwise specified

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD

SOT-23-6 Plastic-Encapsulate MOSFETS

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC CHARACTERICTISCS

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =19V,VGS = 0V

Gate-body leakage current

IGSS

VGS =±12V, VDS = 0V

±100

Gate threshold voltage (note 3)

VGS(th)

VDS =VGS, ID =250µA

Drain-source on-resistance (note 3)

RDS(on)

VGS =4.5V, ID =6A

mΩ

VGS =2.5V, ID =5.5A

mΩ

Forward tranconductance (note 3)

gFS

VDS =5V, ID =6A

Diode forward voltage (note 3)

VSD

IS=1.50A, VGS = 0V

1.0

DYNAMIC CHARACTERICTISCS (note4)

Input Capacitance

Ciss

VDS =10V,VGS =0V,f =1MHz

615

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

120

SWITCHING CHARACTERICTISCS (note 4)

Turn-on delay time

td(on)

7.2

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Total Gate Charge

VDS =10V,VGS =4.5V,ID=6A

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

3.0

Notes :

1.Repetitive rating：Pluse width limited by maximum junction temperature

2.Surface Mounted on FR4 board，t≤10 sec.

3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

4. Guaranteed by design, not subject to production.

1.0

8820

15.5

12.5

VGS=5V, VDS=10V, RL=1.4Ω,

RGEN=3Ω

100

9.0

12.0

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