TF8821 datasheet(2/5 Pages) TUOFENG

2 / 5 page

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

www.sztuofeng.com

2021 V1.2

Single Pulse Avalanche Energy

EAS

Avalanche Current

IAS IAR

●Thermal resistance

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal resistance, junction - case

RthJC

7.0

°C/W

Thermal resistance, junction - ambient

RthJA

°C/W

Soldering temperature, wave soldering for

Tsold

265

°C

●Electronic Characteristics(Tj=25

℃,unless otherwise notse)

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Drain-Source Breakdown

Voltage

BVDSS

VGS =0V,ID =250uA

Gate Threshold Voltage

VGS(TH)

VGS =V DS, ID =250uA

0.45

0.90

Drain-Source Leakage Current

IDSS

VDS=19V, VGS =0V

1.0

Gate- Source Leakage Current

IGSS

VGS=±12V ,VDS =0V

±100

Static Drain-source On

Resistance

RDS(ON)

VGS=4.5V, ID=8A

5.0

6.5

mΩ

VGS=2.5V, ID=6A

6.1

7.5

mΩ

Forward Transconductance

gFS

VDS =10V, ID=8A

Source-drain voltage

VSD

Is=3A

1.20

●Electronic Characteristics

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Input capacitance

Ciss

Vds=15V,Vgs=0V

f = 1MHz

878.7

Output capacitance

Coss

133.2

Reverse transfer capacitance

Crss

110.3

⚫Gate Charge characteristics(Ta = 25

℃)

Parameter

Symbol

Condition

Min.

Typ

Max.

Unit

Gate Risistance

f = 1MHz

1.2

Total gate charge

VDD = 10V

ID = 8.0A

VGS = 4.5V

Gate - Source charge

Qgs

2.8

Gate - Drain charge

Qgd

5.9

Turn-ON Delay time

tD(on)

VGS=4.5V ,VDS=

10V , ID=8.0A

5.3

Turn-ON Rise time

Turn-Off Delay time

tD(off)

Turn-Off Fall time

0.60

TF8821

NOV.

TF8821 Datasheet(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

TF8821 Datasheet(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

Html Pages

1 2 3 4 5

Datasheet Download

Link URL