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2009B Datasheet(PDF) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

Part # 2009B
Description  Dual N-Channel MOSFET
PDF  5 Pages
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Manufacturer  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
Direct Link  http://www.sztuofeng.com/?lang=en
Logo TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

2009B Datasheet(HTML) 4 Page - Shenzhen Tuofeng Semiconductor Technology Co

  2009B Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 2009B Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 2009B Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 2009B Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 2009B Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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www.sztuofeng.com
Feb,2018 V1.0
4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
02
46
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
VDS=4.5V
ID=6A
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
VDS(Volts)
Figure 8: Capacitance Characteristics
Ciss
Crss
Coss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Ton
T
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1
10
100
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10µs
100µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C, TA=25°C
100m
1s
10s
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
DFN-3x3-8L Plastic-Encapsulate MOSFETS
2009B



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