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MA3D650 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # MA3D650
Description  Silicon planar type (cathode common)
PDF  2 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA3D650 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Fast Recovery Diodes (FRD)
MA3D650
Silicon planar type (cathode common)
For high-frequency rectification
I Features
• Low forward rise voltage V
F
• Fast reverse recovery time t
rr
• TO-220D (Full-pack package) with high dielectric breakdown
voltage
> 5.0 kV
• Easy-to-mount, caused by its V cut lead end
I Absolute Maximum Ratings T
a = 25°C
Unit : mm
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
200
V
Non-repetitive peak reverse
VRSM
200
V
surge voltage
Average forward current
IF(AV)
10
A
Non-repetitive peak forward
IFSM
60
A
surge current*
Junction temperature
Tj
−40 to +150
°C
Storage temperature
Tstg
−40 to +150
°C
Note) * : Half sine-wave; 10 ms/cycle
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Repetitive peak reverse current
IRRM1
VRRM = 200 V, TC = 25
°C
100
µA
IRRM2
VRRM = 200 V, Tj = 150
°C6
mA
Forward voltage (DC)
VF
IF = 5 A, TC = 25°C
0.98
V
Reverse recovery time*
trr
IF = 1 A, IR = 1 A
30
ns
Thermal resistance
Rth(j-c)
3
°C/W
Rth(j-a)
63
°C/W
I Electrical Characteristics T
a
= 25°C
Note) 1. Rated input/output frequency: 10 MHz
2. Tightening torque-max. 8 kg
× cm
3. * : trr measuring circuit
Internal Connection
D.U.T
trr
0.1
× I
R
IF
IR
50
5.5
50
123
1
9.9
± 0.3
4.6
± 0.2
2.9
± 0.2
0.8
± 0.1
1.4
± 0.2
23
φ 3.2 ± 0.1
2.6
± 0.1
0.55
± 0.15
2.54
± 0.3
5.08
± 0.5
1.6
± 0.2


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