FEPE16AT datasheet(2/4 Pages) VISHAY

2 / 4 page

FEPE16AT thru FEPE16GT

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Vishay General Semiconductor

Revision: 30-Jan-13

Document Number: 89981

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Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms

Note

(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONSSYMBOL FEPE16AT FEPE16BT FEPE16CT FEPE16DT FEPE16FT FEPE16GT UNIT

Maximum instantaneous

forward voltage per diode

8.0 A

VF (1)

0.95

1.30

Maximum DC reverse

current per diode

rated

TC = 25 °C

IR (2)

μA

TC = 100 °C

500

Maximum reverse recovery

time per diode

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A

trr

Typical junction

capacitance per diode

4.0 V, 1 MHz

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

FEPE16AT

FEPE16BT

FEPE16CT

FEPE16DT

FEPE16FT

FEPE16GT UNIT

Typical thermal resistance

per diode

RJC

2.2

°C/W

per device

RJA (1)

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

FEPE16GT-E3/45

1.92

50/tube

Tube

100

150

Case Temperature (°C)

Resistive or Inductive Load

100

150

200

250

300

Number of Cycles at 60 Hz

C = 100 °C

8.3 ms Single Half Sine-Wave

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