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VS-ST303C Datasheet(PDF) 2 Page - Vishay Siliconix |
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VS-ST303C Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 10 page  VS-ST303C Series www.vishay.com Vishay Semiconductors Revision: 28-Aug-17 2 Document Number: 94373 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) tq = 10 μs to 20 μs for 400 V to 800 V devices; tq = 15 μs to 30 μs for 1000 V to 1200 V devices CURRENT CARRYING CAPABILITY FREQUENCY UNITS 50 Hz 1314 1130 2070 1940 6930 6270 A 400 Hz 1260 1040 2190 1880 3440 2960 1000 Hz 900 700 1900 1590 1850 1540 2500 Hz 340 230 910 710 740 560 Recovery voltage Vr 50 50 50 V Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current dI/dt 50 - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /µF ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 620 (230) A 55 (85) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1180 A Maximum peak, one half cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 7950 t = 8.3 ms 8320 t = 10 ms 100 % VRRM reapplied 6690 t = 8.3 ms 7000 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 316 kA2s t = 8.3 ms 289 t = 10 ms 100 % VRRM reapplied 224 t = 8.3 ms 204 Maximum I2 t for fusing I2 t t = 0.1 to 10 ms, no voltage reapplied 3160 klA2 s Maximum peak on-state voltage VTM ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.16 V Low level value of threshold voltage VT(TO)1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 1.44 High level value of threshold voltage VT(TO)2 (I > x I T(AV)), TJ = TJ maximum 1.48 Low level value of forward slope resistance rt1 (16.7 % x x I T(AV) < I < x IT(AV)), TJ = TJ maximum 0.57 m High level value of forward slope resistance rt2 (I > x I T(AV)), TJ = TJ maximum 0.56 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 mA Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt 1000 A/μs Typical delay time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source 0.83 μs Maximum turn-off time (1) minimum tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/μs VR = 50 V, tp = 500 μs, dV/dt: see table in device code 10 maximum 30 180° el I TM 180° el I TM 100 µs I TM |
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