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WFP75N08 Datasheet(PDF) 2 Page - Wisdom technologies Int`l

Part # WFP75N08
Description  N-Channel MOSFET
PDF  7 Pages
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Manufacturer  WISDOM [Wisdom technologies Int`l]
Direct Link  http://www.wisdom-technologies.com/index.aspx
Logo WISDOM - Wisdom technologies Int`l

WFP75N08 Datasheet(HTML) 2 Page - Wisdom technologies Int`l

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Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
80
-
-
V
Δ
BVDSS/
Δ
TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-0.08
-
V/°C
IDSS
Drain-Source Leakage Current
VDS = 80V, VGS = 0V
--
10
uA
VDS = 64V, TC = 125 °C
--
100
uA
IGSS
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
--
100
nA
Gate-source Leakage, Reverse
VGS = -20V, VDS = 0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
-
4.0
V
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID = 37.5A
-
0.012
0.015
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-
2600
3380
pF
Coss
Output Capacitance
-
940
1220
Crss
Reverse Transfer Capacitance
-
210
275
Dynamic Characteristics
td(on)
Turn-on Delay Time
VDD =40V, ID =75A, RG =25Ω
(Note 4, 5)
-
30
70
ns
tr
Rise Time
-
225
460
td(off)
Turn-off Delay Time
-
165
340
tf
Fall Time
-
155
320
Qg
Total Gate Charge
VDS =64V, VGS =10V, ID =75A
(Note 4, 5)
-
80
105
nC
Qgs
Gate-Source Charge
-
15
-
Qgd
Gate-Drain Charge(Miller Charge)
-
32
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
IS
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
--
75
A
ISM
Pulsed Source Current
-
-
300
VSD
Diode Forward Voltage
IS =75A, VGS =0V
-
-
1.5
V
trr
Reverse Recovery Time
IS=75A, VGS=0V, dIF/dt=100A/us
-90
-
ns
Qrr
Reverse Recovery Charge
-
250
-
uC
WFP75N08
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.



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