MA3V176D datasheet(1/2 Pages) PANASONIC

Part #	MA3V176D

Description	Silicon epitaxial planar type

PDF	2 Pages

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Switching Diodes

1

MA3V175D, MA3V176D

Silicon epitaxial planar type

For switching circuits

I Features

• Short reverse recovery time t

rr

• Small terminal capacitance, C

t

I Absolute Maximum Ratings T

a = 25°C

1 : Cathode

2 : Anode

3 : Cathode

New S-Type Package

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage

MA3V175D

VR

40

V

(DC)

MA3V176D

80

Peak reverse

MA3V175D

VRM

40

V

voltage

MA3V176D

80

Forward current

Single

IF

100

mA

(DC)

Double

150

Peak forward

Single

IFM

225

mA

current

Double

340

Non-repetitive peak

Single

IFSM

500

mA

forward surge current* Double

750

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Internal Connection

Note) * : t = 1 s

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

MA3V175D

IR

VR = 35 V

0.1

µA

MA3V176D

VR = 75 V

0.1

Forward voltage (DC)

VF

IF = 100 mA

1.2

V

Reverse voltage (DC)

MA3V175D

VR

IR = 100 µA40

V

MA3V176D

80

Terminal capacitance

Ct

VR = 0 V, f = 1 MHz

4

pF

Reverse recovery time*

trr

IF = 10 mA, VR = 6 V

10

ns

Irr = 0.1 · IR, RL = 100

Ω

I Electrical Characteristics T

a = 25°C

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

1

3

2

4.0

± 0.2

marking

2.54

± 0.15

1.27

123

Input Pulse

Output Pulse

Sampling

Oscilloscope

R

i = 50 Ω

DUT

R

s = 50 Ω

V

= V

R + IR·RS

I

F

t

r

t

P

t

rr

t

I

rr = 0.1·IR

I

F

0

10%

90%

t

p = 100 ns

t

r = 0.6 ns

δ = 0.05

I

F = 10 mA

V

R = 6 V

R

L = 100 Ω

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MA3V176D Datasheet(PDF) 1 Page - Panasonic Semiconductor

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