AM2N7002WC3VR datasheet(4/7 Pages) AITSEMI

4 / 7 page

AiT Semiconductor Inc.

www.ait-ic.com

AM2N7002W

MOSFET

60V, SMALL SIGNAL NMOS MOSFET

REV1.1

- OCT 2014 RELEASED, MAR 2016 UPDATED -

- 4 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise specified

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

V(BR)DSS VGS = 0, ID = 10μAdc

Vdc

Zero Gate Voltage Drain Current

IDSS

VGS = 0,

VDS = 60Vdc

TJ = 25°C

1.0

μAdc

TJ = 125°C

500

Gate–Body Leakage Current,

Forward

IGSSF

VGS = 20Vdc

μAdc

Gate–Body Leakage Current,

Reverse

IGSSR

VGS = -20Vdc

-1

μAdc

ON CHARACTERISTICS NOTE2

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μAdc

1.0

1.6

2.5

Vdc

On-State Drain Current

ID(ON)

VDS ≥ 2.0VDS(ON), VGS=10Vdc

500

Static Drain–Source

On–State Voltage

VDS(ON)

VGS = 10Vdc, ID = 500mAdc

3.75

Vdc

VGS = 5.0Vdc, ID = 50mAdc

0.375

Static Drain–Source

On–State Resistance

RDS(ON)

VGS = 10V,

ID = 500mAdc

TC = 25°C

1.4

7.5

TC = 125°C

13.5

VGS = 5.0Vdc,

ID = 50mAdc

TC = 25°C

1.8

7.5

TC = 125°C

13.5

Forward Transconductance

gFS

VDS ≥2.0VDS(ON),ID=200mAdc

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = 25Vcd,

VGS = 0,

f = 1.0MHz

1.7

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

2.5

5.0

SWITCHING CHARACTERISTICS NOTE7

Turn-On Delay Time

td(ON)

VDD = 25Vdc , ID ≌500mAdc,

RG = 25Ω, RL = 50Ω,

VGEN = 10V

Turn-Off Delay Time

td(OFF)

BODY-DRAIN DIODE RATINGS

Diode Forward On-Voltage

VSD

IS = 115mAdc, VGS = 0V

-1.5

Vdc

Source Current Continuous

Body Diode

-115

mAdc

Source Current Pulsed

ISM

-800

mAdc

NOTE2: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.

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