AM6512 datasheet(4/11 Pages) AITSEMI

4 / 11 page

AiT Semiconductor Inc.

www.ait-ic.com

AM6512

MOSFET

N-CHANNEL ENHANCEMENT MODE

REV2.0

- MAY 2016 RELEASED, MAY 2018 UPDATED -

- 4 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless Otherwise Noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, IDS=-250μA

Drain-Source Breakdown Voltage

(transient)

BVDSSt

VGS=0V, ID(aval)=40A

Tcase=25°C, ttransient=100ns

Zero Gate Voltage Drain Current

IDSS

VDS=24V, VGS=0V

μA

TJ=85°C

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250μA

1.3

1.6

2.3

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Drain-Source On-state

Resistance

RDS(ON)

NOTE5

VGS=10V, IDS=20A

1.5

1.9

mΩ

TJ=125°C

2.2

VGS=4.5V, IDS=12A

2.2

Forward Transconductance

Gfs

VDS=5V, IDS=15A

Diode Characteristics

Diode Forward Voltage

VSDNOTE5 ISD=20A, VGS=0V

0.8

1.1

Reverse Recovery Time

trr

ISD=20A, dlSD/dt=100A/μs

Charge Time

23.5

Discharge Time

27.5

Reverse Recovery Charge

Qrr

Dynamic Characteristics

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

0.9

Input Capacitance

Ciss

VGS=0V,

VDS=15V,

Frequency=1.0MHz

2820 3666

Output Capacitance

Coss

1910 2674

Reverse Transfer Capacitance

Crss

140

210

Turn-on Delay Time

td(ON)

VDD=15V, RL=15Ω,

IDS=1A, VGEN=10V,

RG=6Ω

15.5

Turn-on Rise Time

Turn-off Delay Time

td(OFF)

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

VDS=15V, VGS=10V,

IDS=20A

44.5

57.8

Total Gate Charge

VDS=15V, VGS=4.5V,

IDS=20A

21.2

Threshold Gate Charge

Qgth

2.9

Gate-Source Charge

Qgs

4.3

Gate-Drain Charge

Qgd

8.3

NOTE5: Pulse test ; pulse width≤300us, duty cycle≤2%.

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