BAS21 datasheet(2/5 Pages) AITSEMI

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AiT Semiconductor Inc.

www.ait-ic.com

BAS21

SWITCHING DIODES

HIGH VOLTAGE SWITCHING DIODE

REV1.0

- SEP 2012 RELEASED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

VR, Continuous Reverse Voltage

250Vdc

IF, Peak Forward Current

200mAdc

IFM(SURGE), Peak Forward Surge Current

625mAdc

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL CHARACTERISTICS

Parameter

Symbol

Max.

Unit

Total Device Dissipation FR– 5 BoardNOTE1

TA=25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation Alumina SubstrateNOTE2

TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ , TSTG

–55 to +150

°C

NOTE1: FR–5 = 1.0 x 0.75 x 0.062 in.

NOTE2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

ELECTRICAL CHARACTERISTICS

TA=25°C, unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

VR=200Vdc

0.1

μAdc

VR=200Vdc, TJ=150°C

100

Reverse Breakdown Voltage

V(BR)

IBR =100μAdc

250

Vdc

Forward Voltage

IF=100mAdc

1000

IF=200mAdc

1250

Diode Capacitance

VR=0, f=1.0MHz

5.0

Reverse Recovery Time

tRR

IF=IR=30mAdc, R=100Ω

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