MSD103C datasheet(2/5 Pages) AITSEMI

2 / 5 page

AiT Semiconductor Inc.

www.ait-ic.com

MSD103A~MSD103C

SCHOTTKY DIODES

SCHOTTKY BARRIER SWITCHING DIODE

REV1.0

- JAN 2012 RELEASED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

@ TA = 25℃, unless otherwise specified

Parameter

Symbol

MSD103A

MSD103B

MSD103C

Unit

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

DC Blocking Voltage

RMS Reverse Voltage

VR(RMS)

Forward Continuous CurrentNOTE1

IFM

350

Non-Repetitive Peak Forward Surge Current

@ t ≤ 1.0s

IFSM

1.5

Power DissipationNOTE1

400

Thermal Resistance, Junction to Ambient

AirNOTE1

RθJA

300

℃/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +125

℃

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

NOTE1: Part mounted on FR-4 board with recommended pad layout, which can be found on our website

ELECTRICAL CHARACTERISTICS

@ TA = 25°C, unless otherwise specified

Parameter

Symbol

Conditions

Min

Typ.

Max

Units

Reverse Breakdown

VoltageNOTE2

V(BR)R

IR = 100μA

MSD103A

MSD103B

MSD103C

Forward Voltage DropNOTE2

VFM

IF = 20mA

0.37

IF = 200mA

0.60

Peak Reverse CurrentNOTE2

IRM

VR = 30V

MSD103A

5.0

µA

VR = 20V

MSD103B

VR = 10V

MSD103C

Total Capacitance

VR = 0V, f = 1.0MHz

Reverse Recovery Time

trr

IF = IR = 200mA,

Irr = 0.1 x IR, RL = 100Ω

NOTE2: Short duration test pulse used to minimize self-heating effect.

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