VBUS05M2-HT5

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 19-Nov-2021

2

Document Number: 86166

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

APPLICATION NOTE

The VBUS05M2-HT5 is a two-line ESD protection device with a bidirectional and symmetrical (BiSy) breakdown and clamping

performance made for application with a voltage working range up to ± 5.5 V. The high ESD immunity and a very low

capacitance makes it usable for high frequency applications like USB2.0, USB3.0, or HDMI.

With the VBUS05M2-HT5 two high speed data lines can be protected against transient voltage signals like ESD (electro static

discharge). Connected to the data line (pin 1 and pin 2) and to ground (pin 3) negative transients will be clamped close above

the 5.5 V working range.

SCHEMATIC DIAGRAM

Fig. A

The simplified schematic diagram in Fig. A shows three identical Z-diodes with the cathode on pin 1, 2, or 3 and common

anodes. In reality each Z-diode consist of one Z-diode for the adjustment of the breakdown voltage, and two low capacitance

ELECTRICAL CHARACTERISTICS (pin 1 or pin 2 to pin 3; in both directions)

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of lines which can be protected

-

-

2

lines

Reverse stand-off voltage

Max. reverse working voltage

--

5.5

V

Reverse voltage

5.5

-

-

V

Reverse current

-

< 0.001

0.1

μA

Reverse breakdown voltage

7.5

8.5

9.5

V

Reverse clamping voltage

-11

13

V

-15

18

V

Clamping voltage

-20-

V

-27-

V

Dynamic resistance

-1-

Ω

Capacitance

-

0.37

0.45

pF

-

0.37

0.45

pF

=

3

1

2