SIR862DP datasheet(1/13 Pages) VISHAY

Part #	SIR862DP

Description	N-Channel 25 V (D-S) MOSFET

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 13 page

SiR862DP

www.vishay.com

Vishay Siliconix

S10-0041-Rev. A, 11-Jan-10

1

Document Number: 65672

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 25 V (D-S) MOSFET

FEATURES

• TrenchFET ® power MOSFET

• 100 % Rg and UIS tested

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•DC/DC conversion



- Low side switch

• Notebook

• Server

• Game console

Notes

a. Based on TC = 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 65 °C/W

e. Package limited

f. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

PRODUCT SUMMARY

VDS (V)

25

RDS(on) max. () at VGS = 10 V

0.0028

RDS(on) max. () at VGS = 4.5 V

0.0035

Qg typ. (nC)

28.4

ID (A) a, e

50

Configuration

Single

PowerPAK® SO-8 Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiR862DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

25

V

Gate-source voltage

VGS

± 20

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

50 e

A

TC = 70 °C

50 e

TA = 25 °C

32 b, c

TA = 70 °C

22.8 b, c

Pulsed drain current

IDM

70

Continuous source-drain diode current

TC = 25 °C

IS

50 e

TA = 25 °C

4.7 b, c

Single pulse avalanche current

L = 0.1 mH

IAS

40

Avalanche energy

EAS

80

mJ

Maximum power dissipation

TC = 25 °C

PD

69

W

TC = 70 °C

44.4

TA = 25 °C

5.2 b, c

TA = 70 °C

3.3 b, c

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) f, g

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient b, d

t

 10 s

RthJA

19

24

°C/W

Maximum junction-to-case (drain)

Steady state

RthJC

1.2

1.8

Similar Part No. - SIR862DP

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SIR862DP	114Kb / 7P	N-Channel 25-V (D-S) MOSFET 11-Jan-10
Vishay Telefunken	SIR862DP	330Kb / 7P	N-Channel 25-V (D-S) MOSFET
Vishay Siliconix	SIR862DP-T1-GE3	114Kb / 7P	N-Channel 25-V (D-S) MOSFET 11-Jan-10

More results

Similar Description - SIR862DP

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI1304DL	88Kb / 5P	N-Channel 25-V (D-S) MOSFET 04-Oct-04
	SIR850DP	109Kb / 7P	N-Channel 25-V (D-S) MOSFET 22-Sep-08
	SI4630DY	239Kb / 10P	N-Channel 25-V (D-S) MOSFET 02-Feb-09
	SI4778DY	244Kb / 10P	N-Channel 25-V (D-S) MOSFET 09-Mar-09
	SIR808DP	480Kb / 13P	N-Channel 25 V (D-S) MOSFET 04-Apr-11
Vishay Telefunken	SIE882DF	207Kb / 10P	N-Channel 25-V (D-S) MOSFET
Vishay Telefunken	SIR438DP	343Kb / 13P	N-Channel 25-V (D-S) MOSFET
Vishay Siliconix	SI4668DY	103Kb / 7P	N-Channel 25-V (D-S) MOSFET 09-Mar-09
Vishay Siliconix	SI7194DP	316Kb / 13P	N-Channel 25-V (D-S) MOSFET 31-Mar-08

More results

SIR862DP Datasheet(PDF) 1 Page - Vishay Siliconix

SIR862DP Datasheet(HTML) 1 Page - Vishay Siliconix

Similar Part No. - SIR862DP

Similar Description - SIR862DP

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL