MJD2873-QJ datasheet(4/10 Pages) NEXPERIA

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Nexperia

MJD2873-Q

50 V, 2 A NPN high power bipolar transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICES

collector-emitter cut-off

current

VCE = 50 V; VBE = 0 V; Tamb = 25 °C

100

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

100

VCE = 2 V; IC = 0.5 A; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

120

360

VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C

hFE

DC current gain

VCE = 1.6 V; IC = 0.75 A; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

360

VCEsat

collector-emitter

saturation voltage

0.3

VBEsat

base-emitter saturation

voltage

IC = 1 A; IB = 50 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

1.2

VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;

Tamb = 25 °C

1.2

VBE

base-emitter voltage

VCE = 1.6 V; IC = 0.75 A; pulsed; tp ≤

300 µs; δ ≤ 0.02; Tamb = 25 °C

0.95

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

transition frequency

VCE = 10 V; IC = 100 mA; f = 100 MHz;

Tamb = 25 °C

MHz

IC (mA)

104

103

102

aaa-033355

200

300

100

400

500

hFE

(1)

(2)

(3)

VCE = 2 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 3. DC current gain as a function of collector

current; typical values

VCE (V)

aaa-033356

1.0

0.5

1.5

2.0

(A)

IB (mA) = 18

Tamb = 25 °C

Fig. 4. Collector current as a function of collector-

emitter voltage; typical values

MJD2873-Q

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Product data sheet

17 May 2021

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