RFD16N05LSM

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2

MAXIMUM RATINGS

Rating

Symbol

RFD16N05LSM9A

Units

Drain to Source Voltage (Note 1)

50

V

50

V

Continuous Drain Current

16

A

Pulsed Drain Current (Note 3)

45

A

Gate to Source Voltage

±10

V

Maximum Power Dissipation

60

W

Derate Above 25°C

0.48

W/°C

Operating and Storage Temperature

−55 to 150

°C

Maximum Temperature for Soldering

Leads at 0.063 in (1.6 mm) from Case for 10 s

300

°C

Package Body for 10 s, See Techbrief 334

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

50

-

-

V

Gate to Threshold Voltage

1

−

2

V

Zero Gate Voltage Drain Current

−

−

1

mA

−

−

50

mA

Gate to Source Leakage Current

−

−

100

nA

Drain to Source On Resistance (Note 2)

−

−

0.047

W

−

−

0.056

W

Turn−On Time

Figures 15, 16

−

−

60

ns

Turn−On Delay Time

−

14

−

ns

Rise Time

−

30

−

ns

Turn−Off Delay Time

−

42

−

ns

Fall Time

−

14

−

ns

Turn−Off Time

−

−

−

ns

Total Gate Charge

Figures 17, 18

−

−

80

nC

Gate Charge at 5 V

−

−

45

nC

Threshold Gate Charge

−

−

3

nC

Thermal Resistance Junction to Case

−

−

2.083

°C/W

Thermal Resistance Junction to Ambient

−

−

100

°C/W

SOURCE TO DRAIN DIODE SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

-

-

1.5

V

Diode Reverse Recovery Time

-

-

125

ns

2. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature.