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SSM6P35AFU Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM6P35AFU Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 8 page ![]() SSM6P35AFU 4 6.4. Source-Drain Characteristics (Unless otherwise specified, Ta = 25 �)(Q1, Q2 Common) Characteristics Diode forward voltage (Note 1) Symbol VDSF Test Condition ID = 100 mA, VGS = 0 V Min � Typ. 0.83 Max 1.2 Unit V Note 1: Pulse measurement. 7. Marking 2021-02-01 Rev.3.0 ©2017-2021 Toshiba Electronic Devices & Storage Corporation |
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