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F2CD10170P Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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F2CD10170P Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page ![]() S E M I C O N D U C TO R TECHNICAL DATA F2CD10170P 2022.05.25 Revision No : 0 1/5 Symbol Parameter Value Units VRRM Repetitive Peak Reverse Voltage 1700 V VRSM Surge Peak Reverse Voltage 1700 V VDC DC Blocking Voltage 1700 V IF Continuous Forward Current TC = 25˚C TC = 160˚C 36 10 A IFRM Repetitive Peak Forward Current TC = 110˚C 83 A IFSM Non-Repetitive Forward Surge Current TC = 25˚C (PW=10ms sinusoidal) TC = 110˚C 60 50 A PD Power Dissipation TC = 25˚C 214 W TJ, Tstg Operating Junction and Storage Temperature -55 to +175 ℃ F2CD10170P 1700V Silicon Carbide Diode Features - 1700-Volt Schottky Rectifier - Shorter recovery time - High-speed switching possible - High-Frequency Operation - Temperature-Independent Switching Behavior - Extremely Fast Switching - Positive Temperature Coefficient on VF - RoHS Compliant Applications - Switch Mode Power Supplies - Power Factor Correction - Motor Drives - HID Lighting Package Outline Absolute Maximum Ratings TC = 25°C unless otherwise noted Anode Cathode TO-247_2L |
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