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F2CD40120B Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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F2CD40120B Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page ![]() S E M I C O N D U C TO R TECHNICAL DATA F2CD40120B 2022.05.25 Revision No : 0 1/5 F2CD40120B 1200V Silicon Carbide Diode Features - 1200-Volt Schottky Rectifier - Shorter recovery time - High-speed switching possible - High-Frequency Operation - Temperature-Independent Switching Behavior - Extremely Fast Switching - Positive Temperature Coefficient on VF - RoHS Compliant Package Outline * Per Leg / Per Device Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter Value Units VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1200 V VDC DC Blocking Voltage 1200 V IF Continuous Forward Current TC = 25˚C TC = 150˚C 53 / 106 20 / 40 A IFRM Repetitive Peak Forward Current TC = 110˚C 124 / 248 A IFSM Non-Repetitive Forward Surge Current TC = 25˚C (PW=10ms sinusoidal) TC = 110˚C 160 / 320 128 / 256 A PD Power Dissipation TC = 25˚C 230 / 460 W TJ, Tstg Operating Junction and Storage Temperature -55 to +175 ℃ Applications - Switch Mode Power Supplies - Power Factor Correction - Motor Drives - Uninterruptible Power Supply - Solar Inverter - EV Charger |
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