TF90N03 datasheet(1/6 Pages) TUOFENG

Part #	TF90N03

Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

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Manufacturer	TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]

Direct Link	http://www.sztuofeng.com/?lang=en

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1 / 6 page

TF90N03

Shenzhen Tuofeng Semiconductor Technology Co., Ltd

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

1

www.sztuofeng.com

Feb

2022 V1.0

●Ordering Information:

●Absolute Maximum Ratings

（T

C =25

℃

）

● General Description

The TF90N03 combines advanced trench

MOSFET technology with a low resistance package

to provide extremely low R

DS(ON)

.This device is ideal for

load switch and battery protection applications.

● Features

Advance high cell density Trench technology

Low RDS(ON) to minimize conductive loss

Low Gate Charge for fast switching

Low Thermal resistance

●Application

MB/VGA Vcore

SMPS 2nd Synchronous Rectifier

POL application

BLDC Motor driver

● Product Summary

VDS =30V

RDSON(10V typ) =3.4mΩ

RDSON(4.5V typ) =5.2mΩ

ID=90A

Part NO.

TF90N03

Marking 1

MOQ

TO-251:50/PCS TO-252:2500/PCS

D

G

S

90N03:TF90N03

Marking 2

TF:tuofeng; Y:year code; X:Week; AA:device code;

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID@TC=25

℃

90

A

ID@TC=75

℃

65

A

ID @TC=100

℃

58

A

Pulsed Drain Current ①

IDM

360

A

Total Power Dissipation

PD@TC=25

℃

90

W

Total Power Dissipation

PD@TA=25

℃

2.0

W

Operating Junction Temperature

T J

-55 to 150

℃

Storage Temperature

TSTG

-55 to 150

℃

Note:

① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ;

TO-252

D

G

S

TO-251

G

D

S

90N03

TFYXAA

90N03

TFYXAA

D

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