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SFS9410 Datasheet(PDF) 2 Page - SemiWell Semiconductor

Part # SFS9410
Description  Logic N-Channel MOSFET
PDF  6 Pages
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Manufacturer  SEMIWELL [SemiWell Semiconductor]
Direct Link  http://www.semiwellsemi.co.kr
Logo SEMIWELL - SemiWell Semiconductor

SFS9410 Datasheet(HTML) 2 Page - SemiWell Semiconductor

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SFS9410
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
30
-
-
V
Δ
BVDSS/
Δ
TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
13.5
-
mV/°C
IDSS
Drain-Source Leakage Current
VDS = 24V, VGS = 0V
--
2
uA
IGSS
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
100
nA
Gate-Source Leakage, Reverse
VGS = -20V, VDS = 0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
1.0
-
-
V
RDS(ON)
Static Drain-Source On-state
Resistance
VGS = 10 V, ID = 7.3A
VGS = 4.5 V, ID = 6.3A
-
-
0.020
0.025
0.028
0.042
Dynamic Characteristics
Ciss
Input Capacitance
VGS = 0 V, VDS = 15V, f = 1MHz
-
640
830
pF
Coss
Output Capacitance
-
280
360
Crss
Reverse Transfer Capacitance
-
95
120
Dynamic Characteristics
td(on)
Turn-on Delay Time
VDD = 25V, ID = 1A, RG = 50Ω
VGS = 10 V
(Note 2,3)
-9
16
ns
tr
Rise Time
-
16
30
td(off)
Turn-off Delay Time
-
100
185
tf
Fall Time
-
40
60
Qg
Total Gate Charge
VDS = 15V, VGS = 10V, ID = 2A
(Note 2,3)
-18
23
nC
Qgs
Gate-Source Charge
-
1.5
-
Qgd
Gate-Drain Charge(Miller Charge)
-
5
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
IS
Continuous Source Diode Forward Current
-
-
2.2
A
VSD
Diode Forward Voltage
IS = 2.2A, VGS =0V
(Note 2)
--
1.1
V
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
4. Surface mounted on 1 inch2 Cu board.
2/6



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